tm april 2007 FDA2712 n-channel ultr afet trench mosfet ?2007 fairchild semiconductor corporation FDA2712 rev. a www.fairchildsemi.com 1 ultrafet FDA2712 n-channel ultrafet trench mosfet 250v, 64a, 34m features ?r ds(on) = 29.2m @v gs = 10 v, i d = 40a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant applications ? pdp application description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s advanced powertrench process that has been especial- ly tailored to minimize the on-state resistance and yet maintain superior switching performance. d g s gs d to-3pn mosfet maximum ratings thermal characteristics symbol parameter ratings units v dss drain to source voltage 250 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 64 a -continuous (t c = 100 o c) 44 i dm d r a i n c u r r e n t - p u l s e d (note 1) 240 a e as single pulsed avalanche energy (note 2) 245 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 357 w - derate above 25 o c2.85w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.35 o c/w r ja thermal resistance, junction to ambient 40
FDA2712 n-channel ultr afet trench mosfet FDA2712 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDA2712 FDA2712 to-3pn n/a n/a 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 250 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.2-v/ o c i dss zero gate voltage drain current v ds = 250v v gs = 0v --1 a t j = 125 o c - - 500 a i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 3.0 3.9 5.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 40a - 29.2 34 m g fs forward transconductance v ds = 10v, i d = 40a (note 4) -43-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 7650 10175 pf c oss output capacitance - 550 735 pf c rss reverse transfer capacitance - 105 155 pf q g total gate charge at 10v v ds = 125v, i d = 80a v gs = 10v (note 4, 5) - 99 129 nc q gs gate to source gate charge - 46 - nc q gd gate to drain ?miller? charge - 21 - nc t d(on) turn-on delay time v dd = 125v, i d = 80a v gs = 10v, r gen = 25 (note 4, 5) - 128 266 ns t r turn-on rise time - 371 751 ns t d(off) turn-off delay time - 143 295 ns t f turn-off fall time - 210 429 ns i s maximum continuous drain to source diode forward current - - 80 a i sm maximum pulsed drain to source diode forward current - - 240 a v sd drain to source diode forward voltage v gs = 0v, i sd = 80a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 80a di f /dt = 100a/ s (note 4) - 175 - ns q rr reverse recovery charge - 1.17 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 1mh, i as = 22.2a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 80a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDA2712 n-channel ultr afet trench mosfet FDA2712 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 100 * notes : 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d ,drain current[a] v ds , drain-source voltage[v] 300 46810 1 10 100 1000 -55 o c 150 o c * notes : 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0.3 0.6 0.9 1.2 1.5 1 10 100 1000 v gs = 0v 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 50 100 150 200 0.02 0.04 0.06 0.08 * note : t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 0 2000 4000 6000 8000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 20406080100120 0 2 4 6 8 10 * note : i d = 80a v ds = 50v v ds = 125v v ds = 200v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDA2712 n-channel ultr afet trench mosfet FDA2712 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10v 2. i d = 40a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 20 40 60 80 i d , drain current [a] t c , case temperature [ o c ] 110100 0.01 0.1 1 10 100 1000 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 400 100ms 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -3 10 -2 10 -1 10 0 0.01 0.1 0.2 0.05 0.02 * notes : 1. z jc (t) = 0.35 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDA2712 n-channel ultr afet trench mosfet FDA2712 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDA2712 n-channel ultr afet trench mosfet FDA2712 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
FDA2712 n-channel ultr afet trench mosfet FDA2712 rev. a www.fairchildsemi.com 7 mechanical dimensions to-3pn
FDA2712 n-channel ultr afet trench mosfet FDA2712 rev. a www.fairchildsemi.com 8 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is aut horized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liabi lity arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairch ild?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expect ed to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of t he life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? motion-spm? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pdp-spm? pop? power220 ? power247 ? powersaver? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information formative or in design this dat asheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet cont ains preliminary data; supplementary data will be published at a later date. fairchild se miconductor reserves the right to make changes at any time with out notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificati ons on a product that has been dis- continued by fairchild semiconductor.the datasheet is printed for refer- ence information only. rev. i25 tm gto? powertrench ? tm poweredge? tm
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